Monolayer MoS 2 /GaAs heterostructure self-driven photodetector with extremely high detectivity

Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure.

Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic pr...

High gain single GaAs nanowire photodetector

GaAs/AlGaAs nanowire photodetector.

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge...

Infrared Spectral Detectivity of Cr‐doped GaAs

Broadband high photoresponse from pure monolayer graphene photodetector.

Graphene has attracted large interest in photonic applications owing to its promising optical properties, especially its ability to absorb light over a broad wavelength range, which has lead to several studies on pure monolayer graphene-based photodetectors. However, the maximum responsivity of these photodetectors is below 10 mA W(-1), which significantly limits their potential for application...